Ultra-Wideband C-Band 4-8 GHz 50W Power Amplifier RF System

This 50W broadband power amplifier is a high-performance RF module designed for applications requiring robust output power across the 4 GHz to 8 GHz frequency range. Utilizing advanced GaN (Gallium Nitride) technology, it delivers high power density, excellent efficiency, and reliable linearity over a wide instantaneous bandwidth. The amplifier is engineered for stability, durability, and consistent performance in demanding environments.

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Product Description

Key Features

Broadband Performance: Operates seamlessly across the full 4 GHz to 8 GHz (C-Band) spectrum without the need for band switching.

High Output Power: Delivers a typical saturated output power of 50 Watts (47 dBm) minimum across the band.

High Gain: Features a typical small-signal gain of 50 dB (minimum), ensuring effective signal amplification from low-power sources.

Excellent Gain Flatness: Maintains superior gain flatness of typically ±1.5 dB over the entire frequency range for uniform performance.

High Efficiency: Incorporates high-efficiency design, typically achieving 30% Power Added Efficiency (PAE), reducing thermal load and DC power consumption.

Robust Linear Performance: Offers high 1 dB compression point (OP1dB) typically > 47 dBm, supporting both linear and saturated amplification for various modulation schemes.

Integrated Protection & Control: Includes comprehensive safety features: Reverse Voltage Protection, Over-Temperature Shutdown, and Output Overload / VSWR Protection. Standard analog interface for bias control, enable/disable (TTL), and status monitoring.

Thermal Management: Designed with an efficient baseplate cooling system to ensure reliable operation under full load conditions. Operational case temperature range: -40°C to +85°C.

Ruggedized Construction: Housed in a robust, hermetically sealed metal package for superior shielding and environmental resilience, suitable for military, aerospace, and industrial applications.

No.	Description	Symbol	Min	Typ	Max	Unit	Remark
1.	Operating Frequency	BW	4000		8000	MHz
2.	Input Power	Pin		0		dBm
3.	Output Power CW	Psat	47	48.5	49.5	dBm	Continuous Wave
4.	Power Gain	Gp	47		49.5	dBm	@ Pin=0 dBm
5.	Power Gain Flatness	△Gp		±1.5		dB	@ Pin=0 dBm
6.	Small SignalGain	G	49	50.5	52	dB	@ Pin=-5dBm
7.	Small SignalGain Flatness	△G		±2		dB	@ Pin=-5dBm
8.	Input Return Loss	S11		-15		dB
9.	Operating Voltage	Vdc	28	28	32	V
10.	Current Consumption	A		6	8	A	@ Pout=50~90W
11.	Working Temperature		-40℃~+50℃
12.	RF Connector Input		SMA, Female
13.	RF Connector Output		SMA, Female
14.	Weight			0.439	0.50	Kg
15.	LengthWidthHeight		1348022			mm
16.	Input Power	PinMax	-5		5	dBm
17.	Interface Definition (7W2 Female)	VDD	A1	Ground
		GND	A2	28Vdc
		Current Sense	1	Analog voltage relative to Module’s current@100mV/A
		Temp Sense	2	Analog voltage relative to Module’sTemperature@10mV/℃
		Enable	3	Amplifier Enable			Amplifier Enable:TTL Logic High（3.3V）（Internally Pulled-Low）
		GND	4	Ground
	Overall dimension	Note: 1、 The overall dimensions are for reference only； 2、 The size can be appropriately increased or decreased according to the customer's requirements； 3、 The positions of the input interface, output interface and power supply interface can be changed according to the actual needs of the customers；

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