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Ultra-Wideband 1000-6000MHz High-Power 100W Power Amplifier
  • Ultra-Wideband 1000-6000MHz High-Power 100W Power AmplifierUltra-Wideband 1000-6000MHz High-Power 100W Power Amplifier
  • Ultra-Wideband 1000-6000MHz High-Power 100W Power AmplifierUltra-Wideband 1000-6000MHz High-Power 100W Power Amplifier
  • Ultra-Wideband 1000-6000MHz High-Power 100W Power AmplifierUltra-Wideband 1000-6000MHz High-Power 100W Power Amplifier

Ultra-Wideband 1000-6000MHz High-Power 100W Power Amplifier

Ultra-Wideband 1000-6000MHz High-Power 100W Power Amplifier is an RF module. A single module can cover 1–6 GHz, eliminating the need for traditional multi-band switching circuits, significantly reducing system size and complexity. Suitable for scenarios involving frequency agility, frequency hopping, or broadband interference.

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Product Description

Ultra-Wideband 1000-6000MHz High-Power 100W Power Amplifier

This module utilizes GaN technology, achieving 30% less heat dissipation than LDMOS at the equivalent 100W power, achieving true high power and low heat dissipation, thus extending the module's lifespan. Furthermore, we have added temperature protection, load protection, overvoltage protection, and overdrive protection to the circuit board, eliminating the need for external protection functions and greatly increasing operational efficiency.

Unlike conventional narrowband frequencies, ultra-wideband (1000-6000MHz) demands higher technical and component quality standards to achieve its ultra-wideband, high-power, high-reliability characteristics. Ultra-Wideband 1000-6000MHz 100W power amplifier has demonstrated outstanding performance in modern multi-band communications, EMC testing, electronic warfare, and anti-drone systems.

Specification of 1000-6200MHz100W Power Amplifier(TC=25℃)

No.

Description

Symbol

Min

Typ

Max

Unit

Remark

1. 

Operating Frequency

BW

1000

 

6200

MHz

 

2. 

Input Power

Pin

 

2

 

dBm

 

3. 

Output Power CW

Psat

50.5

51

52.5

dBm

Continuous Wave

4. 

Power Gain

Gp

48.5

49

50.5

dBm

@ Pin=2 dBm

5. 

Power Gain Flatness

△Gp

 

±1.5

 

dB

@ Pin=2 dBm

6. 

Input Return Loss

S11

 

-15

 

dB

 

7. 

Operating Voltage

Vdc

28

28

32

V

 

8. 

Current Consumption

A

 

17

21.5

A

@ Pout=110~180W

9. 

RF Connector Input

 

SMA, Female

 

 

10. 

RF Connector Output

 

N, Female

 

 

11. 

Weight

 

 

1.9

2

Kg

 

12. 

Length*Width*Height

 

250*150*25

mm

 

13. 

Max Input Power

PinMax

≤10

dBm

 

14. 

Interface Definition

(7W2 Female)

VDD

A1

28Vdc

 

 

GND

A2

Ground

 

 

Overcurrent protection

2

Normal operation :0V

Overcurrent protection:+5V

Overcurrent protection@25A

 

Over-temperature protection

2

Normal operation :0V

Over-temperature protection:+5V

Over-temperature

 

Enable

3

5V~Vdd:ON   

0V:OFF

protection@100℃

 

GND

4

Ground

 

 

State

5

Normal operation :0V

State protection:+5V


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